TPC6108 2004-10-28 1 toshiba field effect transistor silicon p channel mos type (u-mos ? ) TPC6108 notebook pc applications portable equipment applications ? small footprint due to small and thin package ? low drain-source on resistance: r ds (on) = 50 m ? (typ.) ? high forward transfer admittance: |y fs | = 7.4 s (typ.) ? low leakage current: i dss = ?1 0 a (max) (v ds = ? 30 v) ? enhancement-model: v th = ? 0.8 to ? 2.0 v (v ds = ?1 0 v, i d = ?1 ma) maximum ratings (ta = = = = 25c) characteristics symbol rating unit drain-source voltage v dss ? 30 v drain-gate voltage (r gs = 20 k ? ) v dgr ? 30 v gate-source voltage v gss 20 v dc (note 1) i d ? 4.5 drain current pulse (note 1) i dp ? 18 a drain power dissipation(t = 5 s) (note 2a) p d 2.2 drain power dissipation(t = 5 s) (note 2b) p d 0.7 w single pulse avalanche energy (note 4) e as 1.3 mj avalanche current i ar ? 2.25 a repetitive avalanche energy single-device value at dual operation (note 2a, 3b, 5) e ar 0.22 mj channel temperature t ch 150 c storage temperature range t stg ? 55~150 c thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient(t = 5 s) (note 2a) r th (ch-a) 56.8 c/w thermal resistance, channel to ambient(t = 5 s) (note 2b) r th (ch-a) 178.5 c/w note: for (note 1), (note 2), (note 3), (note 4) and (note 5), please refer to the next page. this transistor is an electrostatic sensitive device. please handle with caution. ? unit: mm jedec ? jeita ? toshiba 2-3t1a weight: 0.011 g (typ.) circuit configuration 6 4 1 2 3 5 tentative drain drain gate source drain drain
TPC6108 2004-10-28 2 electrical characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ? 30 v, v gs = 0 v ? ? ? 10 a v (br) dss i d = ? 10 ma, v gs = 0 v ? 30 ? ? drain-source breakdown voltage v (br) dsx i d = ? 10 ma, v gs = 20 v ? 15 ? ? v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.8 ? ? 2.0 v r ds (on) v gs = ? 4.5 v, i d = ? 2.2 a ? 75 100 drain-source on resistance r ds (on) v gs = ?10 v, i d = ? 2.2 a ? 50 60 m ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ? 2.2 a 3.7 7.4 ? s input capacitance c iss ? 570 ? reverse transfer capacitance c rss ? 75 ? output capacitance c oss v ds = ? 10 v, v gs = 0 v, f = 1 mhz ? 85 ? pf rise time t r ? 3.5 ? turn-on time t on ? 12 ? fall time t f ? 21 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 70 ? ns total gate charge (gate-source plus gate-drain) q g ? 13 ? gate-source charge1 q gs1 ? 1.8 ? gate-drain (?miller?) charge q gd v dd ? ? 24 v, v gs = ? 10 v, i d = ? 4.5 a ? 2.5 ? nc source-drain ratings and characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 18 a forward voltage (diode) v dsf i dr = ? 4.5 a, v gs = 0 v ? ? 1.2 v tentative r l = 6.8 ? v dd ? ? 15 v ? 10 v v gs 0 v 4.7 ? i d = ? 2.2 a v out
TPC6108 2004-10-28 3 marking (note 5) note 1: ensure that the channel temperature does not exceed 150 ? . note 2: (a) device mounted on a glass-epoxy board (a) (t = 5 s) (b) device mounted on a glass-epoxy board (b) (t = 5 s) note 3: v dd = ? 24 v,t ch = 25c (initial),l = 0.2 mh,r g = 25 ?, i ar = -2.25 a note 4: repetitive rating: pulse width limited by max channel temperature note 5: ? on lower left of the marking indicates pin 1. (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) tentative part no. (or abbreviation code) s3h a line indicates lead (pb)-free package or lead (pb)-free finish. lot code (month) lot no. (weekly code) pin #1 lot code (year) product-specific code
TPC6108 2004-10-28 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use tentative
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